首页> 外国专利> Method for locating IDDQ defects using multiple controlled collapse chip connections current measurement on an automatic tester

Method for locating IDDQ defects using multiple controlled collapse chip connections current measurement on an automatic tester

机译:在自动测试仪上使用多个受控塌陷芯片连接电流测量来定位IDDQ缺陷的方法

摘要

A method for improving the signal-to-noise ratio in an IDDQ defect test is disclosed. An integrated circuit is divided into a plurality of areas and each area is provided with and bounded by terminals. An IDDQ defect is activated to generate IDDQ defect current within the integrated circuit. An amount of IDDQ defect current generated within each area is measured at the terminals provided thereto. Based on the IDDQ current measurement on each area, an IDDQ current map is created. By analyzing the IDDQ current map, the presence and location of the defect is determined. Based on the determination, the IDDQ defect is isolated.
机译:公开了一种在I DDQ 缺陷测试中改善信噪比的方法。集成电路被分成多个区域,并且每个区域都设有端子并由端子界定。激活I DDQ 缺陷以在集成电路内生成I DDQ 缺陷电流。在每个区域内提供的端子处测量在每个区域内产生的I DDQ 缺陷电流的量。基于每个区域的I DDQ 电流测量,创建I DDQ 电流图。通过分析I DDQ 当前图,可以确定缺陷的存在和位置。根据该确定,隔离I DDQ 缺陷。

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