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Method for formation of semiconductor device pattern, method for designing photo mask pattern, photo mask and process for photo mask
Method for formation of semiconductor device pattern, method for designing photo mask pattern, photo mask and process for photo mask
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机译:半导体器件图案的形成方法,光掩模图案的设计方法,光掩模和光掩模的工艺
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摘要
A shielding film is formed on the surface of a substrate and a pair of aperture patterns for light transmission with substantially the same line width are formed in the above shielding film so as to run parallel to each other with a gap and to be isolated from other aperture patterns for light transmission. The exposure amount (exposure energy to sufficiently large aperture pattern) at the time a photoresist is exposed by using this photo mask is 4 or more times and 20 or less times as large as the exposure amount on the border where the photoresist is converted from soluble to insoluble through the exposure or the exposure amount on the border from insoluble to soluble. Thereby, it becomes possible to form a microscopic pattern without using an auxiliary pattern method or a phase shift mask and the default inspection of a mask can be made easy.
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