Replacing layers of an intergate dielectric layer with high-K material for improved scalability

摘要

A method of making and a semiconductor device formed on a semiconductor substrate having an active region. The semiconductor device includes a gate dielectric layer disposed on the semiconductor substrate. A floating gate is formed on the gate dielectric layer and defines a channel interposed between a source and a drain formed within the active region of the semiconductor substrate. A control gate is formed above the floating gate. Further, the semiconductor device includes an intergate dielectric layer interposed between the floating gate and the control gate. The intergate dielectric layer including a first, a second and a third layers. The first layer formed on the floating gate. The second layer formed on the first layer. The third layer formed on the second layer. Each of the first, second and third layers has a dielectric constant greater than SiO₂ and an electrical equivalent thickness of less than about 50 angstroms (Å) of SiO₂.