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OPC method for generating corrected patterns for a phase-shifting mask and its trimming mask and associated device and integrated circuit configuration
OPC method for generating corrected patterns for a phase-shifting mask and its trimming mask and associated device and integrated circuit configuration
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机译:用于为移相掩模及其修整掩模生成校正后的图案的opc方法以及相关装置和集成电路配置
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摘要
A method is provided in which a pattern for a phase-shifting mask is firstly corrected in a first correction step. Subsequently, the pattern for the trimming mask is corrected with use of the corrected pattern for the phase-shifting mask in a second correction step. Mask data for the production of very-large-scale integrated circuits can be corrected in a simple manner by means of the two correction steps performed in succession.
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