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Magnetic transducer, thin film magnetic head, method of manufacturing magnetic transducer and method of manufacturing thin film magnetic head

机译:磁换能器,薄膜磁头,制造磁换能器的方法以及制造薄膜磁头的方法

摘要

Provided are a magnetic transducer and a thin film magnetic head having good thermal stability and capable of obtaining a high exchange coupling magnetic field, a method of manufacturing a magnetic transducer and a method of a manufacturing a thin film magnetic head. An MR element has a stack having a stacked structure comprising an underlayer, a crystal-growth inhibitor layer, a first soft magnetic layer, a second soft magnetic layer, a nonmagnetic layer, a ferromagnetic layer, an antiferromagnetic layer and a cap layer, which are stacked in sequence. The ferromagnetic layer has an inner ferromagnetic layer, a coupling layer and an outer ferromagnetic layer, which are stacked in this order on the nonmagnetic layer. The crystal-growth inhibitor layer inhibits crystal growth of the layers formed on the crystal-growth inhibitor layer, thereby limiting an average in-surface particle diameter of the inner ferromagnetic layer to within the range of from 3 nm to 8 nm inclusive, so that an interface between the coupling layer and the inner ferromagnetic layer becomes flattened.
机译:提供一种具有良好的热稳定性并且能够获得高交换耦合磁场的磁换能器和薄膜磁头,一种制造磁换能器的方法以及一种制造薄膜磁头的方法。 MR元件具有具有堆叠结构的堆叠体,该堆叠结构包括底层,晶体生长抑制剂层,第一软磁层,第二软磁层,非磁性层,铁磁层,反铁磁层和盖层,依次堆叠。铁磁层具有内部铁磁层,耦合层和外部铁磁层,它们依次堆叠在非磁性层上。晶体生长抑制剂层抑制了在晶体生长抑制剂层上形成的层的晶体生长,从而将内部铁磁层的平均表面内粒径限制在3nm至8nm的范围内,包括3nm至8nm。耦合层和内部铁磁层之间的界面变得平坦。

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