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Method for epitaxially growing crystalline insulation layer on crystalline silicon substrate while simultaneously growing silicon oxide, nitride, or oxynitride
Method for epitaxially growing crystalline insulation layer on crystalline silicon substrate while simultaneously growing silicon oxide, nitride, or oxynitride
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机译:在晶体硅衬底上外延生长晶体绝缘层,同时生长氧化硅,氮化物或氮氧化物的方法
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摘要
Metal which forms a crystalline insulation layer is sputtered at a target and deposited as a film on a silicon substrate, the metal is chemically combined with reactive gas around the silicon substrate to thereby grow a crystal layer of a crystalline insulation substance, and a voltage is applied to the substrate so that ions of the reactive gas around the substrate are attracted to a surface of the silicon substrate and chemically combined with silicon, whereby an insulation silicon compound layer is formed. As a result, a structure is obtained in which a crystalline insulation layer is formed on a crystalline silicon layer through an amorphous insulation film which is formed by a silicon compound which has an excellent insulation characteristic.
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