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Array foreshortening measurement using a critical dimension scanning electron microscope

机译:使用临界尺寸扫描电子显微镜进行阵列缩短测量

摘要

A method and system for measuring lithographic image foreshortening. The method comprises the steps of providing a critical dimension scanning electron microscope, and using that critical dimension scanning electron microscope to measure lithographic image foreshortening. Preferably, a defined feature is formed using a lithographic process, and the critical dimension scanning electron microscope is used to measure foreshortening of that feature. For example, the feature may be a line, and the critical dimension scanning electron microscope may be used to measure foreshortening of the line. Also, the feature may be two arrays of lines, and the critical dimension scanning electron microscope may be used to measure the separation distance between the arrays. That separation distance may be used to determine a focus of the lithographic process.
机译:一种用于测量光刻图像缩短的方法和系统。该方法包括以下步骤:提供临界尺寸扫描电子显微镜,并且使用该临界尺寸扫描电子显微镜测量光刻图像的缩短。优选地,使用光刻工艺形成限定的特征,并且使用临界尺寸扫描电子显微镜来测量该特征的缩短。例如,该特征可以是线,并且临界尺寸扫描电子显微镜可以用于测量线的缩短。而且,特征可以是线的两个阵列,并且临界尺寸扫描电子显微镜可以用于测量阵列之间的间隔距离。该分离距离可以用于确定光刻工艺的焦点。

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