CRITICAL DIMENSION MEASUREMENT METHOD FOR MASK USING SCANNING ELECTRON MICROSCOPE

摘要

The present invention comprising the steps of: in view of the number of different cases relates to a critical section Measurement of the mask using a scanning electron microscope to test the variation in the threshold region measured waveform due to the scattering electrons in a mask structure, of the experiment and storing the result of the estimated waveform as the database, and the critical areas of the actual sample mask measured using a scanning electron microscope, comprising the steps of: detecting the threshold domain waveform, separating the edges of the critical section the waveform, the edge and a step of searching the estimated waveform having the most similar shape from the database, a step of replacing the threshold regions waveforms to expected waveforms detected. In this connection the present invention constructed as described are considered to be of a different case, the simulated distortion in the critical area measured waveform according to the scattered electrons, and to store the results, to find the actual critical region most similar to the measured waveform measurement results waveform, by replacing the critical section with the waveform resulting waveform of the experiment, there is an effect capable of detecting an accurate critical region even when the light-shielding film pattern is finer than that of the mask.