首页>
外国专利>
Edge-emitting nitride-based laser diode with p-n tunnel junction current injection
Edge-emitting nitride-based laser diode with p-n tunnel junction current injection
展开▼
机译:具有p-n隧道结电流注入的边缘发射氮化物基激光二极管
展开▼
页面导航
摘要
著录项
相似文献
摘要
A p-n tunnel junction between a p-type semiconductor layer and a n-type semiconductor layer provides current injection for an edge-emitting nitride based semiconductor laser structure. The amount of p-type material in the nitride based semiconductor laser structure can be minimized, with attendant advantages in electrical, thermal, and optical performance, and in fabrication.
展开▼