首页> 外国专利> InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(ALIn)1-xP

InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(ALIn)1-xP

机译:具有InAsP量子阱层和Gax(ALIn)1-xP势垒层的InP基高温激光器

摘要

The invention provides a laser structure that operates at a wavelength of 1.3 &mgr;m and at elevated temperatures and a method of making same. The laser structure includes a quantum well layer of InAsP. The quantum well layer is sandwiched between a first barrier layer and a second barrier layer. Each barrier layer exhibits a higher bandgap energy than the quantum well layer. Also, each barrier layer comprises Gax(AlIn)1−xP in which x 0. This material has a higher bandgap energy than conventional barrier layer materials, such as InGaP. The resulting larger conduction band discontinuity leads to improved high temperature performance without increasing the threshold current of the laser structure.
机译:本发明提供了在1.3μm的波长和升高的温度下工作的激光器结构及其制造方法。激光结构包括InAsP的量子阱层。量子阱层被夹在第一阻挡层和第二阻挡层之间。每个势垒层表现出比量子阱层更高的带隙能量。而且,每个阻挡层包括其中x 0的Ga x (AlIn) 1x-Sub P。该材料具有比常规阻挡层材料(例如InGaP)更高的带隙能量。所产生的较大的导带不连续性导致改进的高温性能,而不增加激光器结构的阈值电流。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号