Single transistor ferroelectric memory cell, device and method for the formation of the same incorporating a high temperature ferroelectric gate dielectric

摘要

A single transistor (1T) ferroelectric memory cell, device and method for the formation of the same incorporating a high temperature ferroelectric gate dielectric. The memory cell of the present invention comprises a substrate, an overlying ferroelectric layer, which may comprise a film of rare earth manganite, and an interfacial oxide layer intermediate the substrate and the ferroelectric layer. In a preferred embodiment, the ferroelectric material utilized in an implementation of the present invention may be deposited by metallorganic chemical vapor deposition (MOCVD) or other techniques and exhibits a low relative dielectric permittivity of around 10 and forms an interfacial layer with a relative dielectric permittivity larger than that of SiO₂, which makes it particularly suitable for a 1T cell.