首页> 外国专利> Provision for the reduction of piezoelectric effects in at least one component sensitive to electrical, piezoelectric Effects, with an active layer of Semiconductor material

Provision for the reduction of piezoelectric effects in at least one component sensitive to electrical, piezoelectric Effects, with an active layer of Semiconductor material

机译:借助半导体材料的有源层,可减少至少一种对电压电效应敏感的组件的压电效应

摘要

Chip describes a provision for reduction of piezoelectric effects in at least one component (3) to sensitive Electrical effects with a piezoelectric Layer (2) Active semiconductor material, at the same time,This Layer (2) Active semiconductor material comprises at least a First area (2a) with the electrical Component (3) sensitive piezoelectric effects and a Second area (2b) with a number of contacts (6) for the electrical Contact.That is because this Layer (2) Active semiconductor material is United in the area (2b) of the contacts (6) by means of an electrical Contact Material mechanically and electrically and / or thermally with a substrate (5), at the same time,The area (2a) with the component (3) sensitive piezoelectric effects is detached from the substrate (5) and is also free of Electrical Contact.
机译:芯片描述了一种措施,用于将至少一个组件(3)中的压电效应减小到具有压电层(2)有源半导体材料的敏感电效应,同时,该层(2)有源半导体材料至少包括第一层具有电组件(3)敏感压电效应的区域(2a)和具有多个电接触点(6)的第二区域(2b),这是因为该层(2)活性半导体材料在该区域内(2b)的触点(6)通过电触点材料与基板(5)进行机械和/或热和/或热作用,同时区域(2a)具有组件(3)的敏感压电效应从衬底(5)上分离出来,并且也没有电接触。

著录项

  • 公开/公告号AR034636A1

    专利类型

  • 公开/公告日2004-03-03

    原文格式PDF

  • 申请/专利权人 SIEMENS METERING AG;

    申请/专利号AR2002P102396

  • 发明设计人 PETR JAN;

    申请日2002-06-25

  • 分类号H01L43/04;

  • 国家 AR

  • 入库时间 2022-08-21 23:12:28

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