首页> 外国专利> ARRANGEMENT FOR REDUCING THE PIEZOELECTRIC EFFECTS IN AT LEAST ONE ELECTRICAL COMPONENT WHICH IS SENSITIVE TO PIEZOELECTRIC EFFECTS AND ARRANGED IN AN ACTIVE LAYER OF SEMICONDUCTOR MATERIAL

ARRANGEMENT FOR REDUCING THE PIEZOELECTRIC EFFECTS IN AT LEAST ONE ELECTRICAL COMPONENT WHICH IS SENSITIVE TO PIEZOELECTRIC EFFECTS AND ARRANGED IN AN ACTIVE LAYER OF SEMICONDUCTOR MATERIAL

机译:减小对压电效应敏感并在半导体材料的有源层中布置的至少一个电气元件中的压电效应的装置

摘要

The invention relates to a chip device (1) comprising an active layer of semiconductor material (2) which is divided into a first area (2a) having an electrical component (3) which is sensitive to piezoelectric effects, and a second area (2b) with a plurality of contacts (6) used for electrical contacting. The invention aims to reduce the piezoelectric effects in the electrical component (3) which is sensitive to said effects. In order to achieve this, the active layer of semiconductor material (2) is connected to a substrate (5) exclusively in the area (2b) of the contacts (6) by means of an electrical contact material, said connection being mechanical and electrical and/or thermal. The area (2a) containing the electrical component (3) which is sensitive to piezoelectric effects is disposed at a distance from the substrate (5) and is free from the electrical contact material.
机译:本发明涉及一种芯片装置(1),其包括半导体材料(2)的有源层,该有源层被划分为具有对压电效应敏感的电部件(3)的第一区域(2a)和第二区域(2b)。 )具有多个用于电接触的触点(6)。本发明旨在减少对所述效应敏感的电气部件(3)中的压电效应。为了实现这一点,半导体材料的有源层(2)仅通过电接触材料在触头(6)的区域(2b)中与衬底(5)连接,所述连接是机械的和电的和/或热量。包含对压电效应敏感的电组件(3)的区域(2a)与衬底(5)相距一定距离,并且没有电接触材料。

著录项

  • 公开/公告号EP1402584A1

    专利类型

  • 公开/公告日2004-03-31

    原文格式PDF

  • 申请/专利权人 LANDIS+GYR AG;

    申请/专利号EP20020780922

  • 发明设计人 PETR JAN;

    申请日2002-04-09

  • 分类号H01L43/04;H01L21/60;

  • 国家 EP

  • 入库时间 2022-08-21 22:52:57

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