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Process and apparatus for mocvd growth of compounds including gaasn alloys using an ammonia precursor with a catalyst

机译:使用氨前体和催化剂使包括Gaasn合金在内的化合物运动生长的方法和设备

摘要

"PROCESS AND APPARATUS FOR MOCVD GROWTH OF COMPOUNDS INCLUDING GAASN ALLOYS, USING AN AMMONIA PRECURSOR WITH A CATALYST". The present invention relates to a process of using ammonia to form a GaAs alloy with nitrogen atoms as described. The process includes the operation of introducing ammonia with an agent to aid in the decomposition of ammonia in a reaction chamber with the GaAs film. Agents that are described include radiation as well as compounds including aluminum.
机译:“使用氨前驱体和催化剂,对包括Gaasn合金在内的化合物进行MOCVD生长的方法和装置”。如上所述,本发明涉及使用氨形成具有氮原子的GaAs合金的方法。该方法包括将氨与试剂一起引入的操作,以帮助氨在具有GaAs膜的反应室中分解。所描述的试剂包括辐射以及包括铝在内的化合物。

著录项

  • 公开/公告号BR0305936A

    专利类型

  • 公开/公告日2004-09-14

    原文格式PDF

  • 申请/专利权人 XEROX CORPORATION;

    申请/专利号BR20030305936

  • 发明设计人 MICHAEL A. KNEISSL;DAVID W. TREAT;

    申请日2003-12-08

  • 分类号H01L33/00;H01L21/78;H01L21/20;

  • 国家 BR

  • 入库时间 2022-08-21 23:11:52

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