首页> 外国专利> SEMICONDUCTOR PRODUCTION SYSTEM AND RECOVERY OF AT LEAST ONE PERFLUOROCOMPOUND GAS FROM A GAS MIXTURE FLOWING FROM SUCH A SYSTEM

SEMICONDUCTOR PRODUCTION SYSTEM AND RECOVERY OF AT LEAST ONE PERFLUOROCOMPOUND GAS FROM A GAS MIXTURE FLOWING FROM SUCH A SYSTEM

机译:半导体生产系统和从这样的系统中混合的气体中至少回收一种全化合物的气体

摘要

A process to recover at least one perfluorocompound gas or gas mixture flowing from a semiconductor manufacturing process, comprising the steps of: (a) providing a gas mixture (24) comprising at least one perfluorocompound gas, at least one harmful species, and at least one carrier gas; (b) providing a polymer membrane (6) having a feed side and a permeate side, (c) pretreating said gas mixture to reduce the concentration of said species harmful to said membrane and obtaining a treated gas mixture; (d) contacting the feed side of said membrane with said treated gas mixture; (e) withdrawing a concentrated gas mixture comprising a higher concentration of the at least one perfluorocompound gas than in the treated gas mixture, from the feed side of the membrane as a non-permeate stream (8) at a pressure which is substantially equal to said predetermined pressure; and (f) withdrawing a gas or gas mixture from the permeate side of said membrane as a permeate stream enriched in carrier gas. 334 ו' בניסן התשס" ד - March 28, 2004
机译:一种回收从半导体制造工艺中流出的至少一种全氟化合物气体或气体混合物的方法,包括以下步骤:(a)提供一种包含至少一种全氟化合物气体,至少一种有害物质和至少一种气体的气体混合物(24)。一种载气; (b)提供具有进料侧和渗透侧的聚合物膜(6),(c)预处理所述气体混合物以降低对所述膜有害的所述物质的浓度,并获得处理过的气体混合物; (d)使所述膜的进料侧与所述处理过的气体混合物接触; (e)从膜的进料侧以基本上等于0的压力从浓缩液的进料侧抽出包含浓度比处理后的气体混合物中更高的至少一种全氟化合物气体的浓混合气体混合物,作为非渗透物流(8)。所述预定压力; (f)从所述膜的渗透侧抽出气体或气体混合物,作为富含载气的渗透物流。 334ו'בניסןהתשס"תשס-2004年3月28日

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