首页> 外国专利> ZEOLITH LAYERS WITH A CONTROLLED CRYSTAL WIDTH AND GROWTH WITH PREFERRED ORIENTATION ON A GROWTH-PROMOTING LAYER

ZEOLITH LAYERS WITH A CONTROLLED CRYSTAL WIDTH AND GROWTH WITH PREFERRED ORIENTATION ON A GROWTH-PROMOTING LAYER

机译:具有可控制的晶体宽度和生长的ZEOLITH层,并且在促进生长的层上具有优先的方向

摘要

The present invention is directed toward a new zeolite composition having coated thereon a mesoporous growth enhancing layer and a layer of zeolite crystals on said mesoporous growth enhancing layer, and wherein said mesoporous growth enhancing layer comprises nanocrystalline or colloidal sized zeolites, nanocrystalline or colloidal zeolite and metal oxide, or nanocrystalline or colloidal zeolite and colloidal metal, or nanocrystalline or colloidal zeolite, colloidal metal and metal oxide, and wherein said mesoporous growth enhancing layer has interstices of about 20 to about 2000 ANGSTROM , and wherein said zeolite layer is a polycrystalline layer of oriented crystals with similar habit wherein 99,9 % of said zeolite crystals have at least one point between adjacent crystals that is /= 20 ANGSTROM . The invention is further directed to a process of producing and using the composition.
机译:本发明涉及一种新型沸石组合物,其上涂覆有介孔生长促进层和在所述介孔生长促进层上的沸石晶体层,并且其中所述介孔生长促进层包含纳米晶体或胶体尺寸的沸石,纳米晶体或胶体沸石和金属氧化物,或纳米晶体或胶体沸石和胶体金属,或纳米晶体或胶体沸石,胶体金属和金属氧化物,并且其中所述中孔生长促进层具有约20至约2000的间隙,并且其中所述沸石层是多晶层相似取向的定向晶体,其中99.9%的所述沸石晶体在相邻晶体之间至少有一个点,该点等于或等于20埃。本发明进一步涉及生产和使用该组合物的方法。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号