OZONE OXIDATION OF SILICON SUBSTRATES FOR FOR FORMATION OF AN INTERFACIAL LAYER FOR HIGH-K GATE STACKS

摘要

A new method of forming an interfacial oxide layer for gate structures is provided. The method comprises ozone oxidation of a silicon substrate at low temperatures to form an interfacial oxide layer. A method of making gate stacks is also provided which includes forming an interfacial oxide layer on the top surface of a silicon substrate by ozone oxidation at a low temperature, and depositing dielectric layers on the top of the interfacial oxide layer.