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LOW EMITTER RESISTANCE CONTACTS TO GAAS HIGH SPEED HBT
LOW EMITTER RESISTANCE CONTACTS TO GAAS HIGH SPEED HBT
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机译:低辐射电阻,可与Gaas高速HBT接触
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摘要
A heterojunction bipolar transistor, (40), is provided having an improved current gain cutoff frequency. The heterojunction bipolar transistor, (40), shown in Figure 1, includes a contact region layer (22), formed from InGaAsSb. The contact region, (20/22), allows an emitter region, (18), of the heterojunction bipolar transistor, (40), to realize a lower contact resistance value to yield an improved cutoff frequency (fT).
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