首页> 外国专利> CONTROL OF FILM GROWTH USING AUGER ELECTRON SPECTROSCOPY FOR MEASURING FILM THICKNESS AND CHEMICAL COMPOSITION

CONTROL OF FILM GROWTH USING AUGER ELECTRON SPECTROSCOPY FOR MEASURING FILM THICKNESS AND CHEMICAL COMPOSITION

机译:用俄歇电子能谱法测定薄膜的厚度和化学组成,从而控制薄膜的生长

摘要

Apparatus for analysis of a thin film formed over an underlying layer on a surface of a sample, the thin film including first elements, while the underlying layer includes second elements. The apparatus includes an electron gun, which directs a beam of electrons to impinge on a point on the surface of the sample at which the thin film is formed. An electron detector receives Auger electrons emitted by the first and second elements responsive to the impinging beam of electrons, and to output a signal indicative of a distribution of energies of the emitted electrons. A controller receives the signal and analyzes the distribution of the energies so as to determine a composition of the first elements in the thin film and a thickness of the thin film. Furthermore, the controoler adjusts in response to the determinated composition and thickness an operating parameter of a deposition station adapted to form the thin film.
机译:用于分析在样品表面上的底层上形成的薄膜的设备,该薄膜包括第一元素,而底层包括第二元素。该设备包括电子枪,该电子枪引导电子束撞击在样品表面上形成薄膜的一点上。电子检测器响应于撞击的电子束接收由第一和第二元件发射的俄歇电子,并输出指示所发射电子的能量分布的信号。控制器接收信号并分析能量的分布,以便确定薄膜中的第一元素的组成和薄膜的厚度。此外,控制装置响应于所确定的组成和厚度来调节适于形成薄膜的沉积站的操作参数。

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