GaN-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF PRODUCING GaN-BASED CRYSTAL

摘要

The GaN group light emitting element of the present invention comprises a light emitting layer made from a GaN group material having a composition capable of ultraviolet emission, and the light emitting layer has a part having lowered dislocation. The dislocation of the light emitting layer is lowered by the mask method. In a preferable mode, any GaN group crystal layer formed in the light emitting element is AlyGa(1-y)N (0y≦1) and the Al composition thereof satisfies [energy Eg1 of light emitted from the light emitting layer] [band gap energy Eg2 of layer(s) other than the light emitting layer]. In addition to the lowering of the dislocation of the light emitting layer by the mask method, preferable collateral embodiments for highly efficient ultraviolet light emission are provided, such as lowering the dislocation of an electrode forming face and a Bragg reflection layer for protection and the like. The production method of the present invention is characterized in that, of the feed gases fed for the crystal growth, an alkyl chloride compound of a group III element is used as a group III feed gas when forming a layer covering a mask layer by MOCVD according to the mask method. This method is preferably applied to the formation of a layer covering a mask in the GaN group light emitting element of the present invention.