An optoelectronic device doped to augment an optical power threshold for bandwidth collapse and a method of manufacturing therefor

摘要

An improved optoelectronic device and a method of manufacture therefor. The optoelectronic device includes a doped buffer layer (320) located over a substrate (310) having an optical window (315) formed therein and an absorber layer (330) located over the doped buffer layer (320). The optoelectronic device further includes a doped region (350) located over the absorber layer (330) and having a dopant tail (355) that extends substantially through the absorber layer (330), and the doped buffer layer (320) and the dopant tail (355) are doped to augment an optical power threshold for bandwidth collapse of the optoelectronic device.