Method of fabricating a stack consisting of a layer of Si3N4 topped by a layer of SiO2 on a semiconductor substrate

摘要

A method of fabricating a stack consisting of a layer of Si₃N₄ topped by a layer of SiO₂ on a semiconductor substrate involves depositing the layer of Si₃N₄ on the semiconductor substrate in a reactor in a NH₃ and bis(tert.-butylamino)silane atmosphere at a temperature of 600 to 650°C and a pressure of 40 to 53 Pa and then depositing the layer of SiO₂ on the layer of Si₃N₄ in the same reactor in an O₂ and bis(tert.-butylamino)silane atmosphere at a temperature of 600 to 650°C and a pressure of 40 to 53 Pa.