首页> 外国专利> APPARATUS AND MEASUREMENT PROCEDURE FOR THE FAST, QUANTITATIVE, NON-CONTACT TOPOGRAPHIC INVESTIGATION OF SEMICONDUCTOR WAFERS AND OTHER MIRROR LIKE SURFACES

APPARATUS AND MEASUREMENT PROCEDURE FOR THE FAST, QUANTITATIVE, NON-CONTACT TOPOGRAPHIC INVESTIGATION OF SEMICONDUCTOR WAFERS AND OTHER MIRROR LIKE SURFACES

机译:半导体晶片和其他镜面快速,定量,非接触式地形学调查的设备和测量程序

摘要

the object of the invention is, on the one hand, and mu00e1stu00fcku00f6rjellegu0171 surfaces of semiconductor wafers u00e9rintu00e9smentes, fast quantitative measurement system which is suitable for topogru00e1fiaivizsgu00e1latu00e1ra, 4.figure szerintu00e1bru00e1zolt manner, point light source, the light source (1) and the fu00e9nyu00e9tpu00e1rhuzamosu00edtu00f3 kollimu00e1lt beam of light to the test area vetu00edtu0151homoru00fa mirror (4),the light source and the mirror elhelyezettstrukturu00e1lt between mask patterns (3) and the test surface.then, the concave mirror in the path of beam of light reflected eztku00f6vetu0151en helyezettku00e9pu00e9rzu00e9kelu0151 contains sensor (6).the szenzorhoz suitable interface (7) is connected by means of a computer (8), (9) which, on the one hand, ahozzu00e1csatlakozu00f3 monitor displays the sensor by u00e9rzu00e9keltku00e9pet,on the other hand, suitable for maszkku00e9pelemeinek algorithm determines the sensor surface formed in a position.the invention tu00e1rgyamu00e1sru00e9szt measurement procedure, which in the above described arrangement u00e9salkalmas algorithm fu00e9lvezetu0151szeletek and other tu00fcku00f6rjellegu0171felu00fcletek u00e9rintu00e9smentes,a rapid quantitative topographical vizsgu00e1latu00e1raalkalmas.the essence of the invention is that the mask and the other element relative to the position of the szenzornak i got elected to the mask essentially sharp optical image of aszenzoron appear.the advantage of atalu00e1lmu00e1ny increased lateral resolution, accuracy u00e9sdinamikai province. oh
机译:发明内容一方面,本发明的目的是对半导体晶片的表面进行快速定量的测量,该系统适用于topogr u00e1fiaivizsg u00e1lat u00e1ra,4.f szerint u00e1br u00e1zolt方式,点光源,光源(1)和f束光束到测试区域vet u00edt u0151homor ufa ),将光源和反射镜在掩模图案(3)与测试表面之间放置。然后,在光束路径中的凹面反射镜eztk u00f6vet u0151en helyezettk u00e9p u00e9rz传感器(6)。szenzorhoz合适的接口(7)通过计算机(8),(9)连接,一方面,ahozz u00e1csatlakoz u00f3监视器通过 u00e9rz u00e9keltk u00e9pet显示传感器,另一方面,适合maszkk u00e9pelemeinek算法的sens或在某个位置形成的表面。本发明的测量程序,在上述安排中,算法为本发明的实质是,掩膜和相对于我所选择的szenzornak位置的其他元素在掩膜中基本上呈现出清晰的aszenzoron光学像。atal u00e1lm 的优势提高横向分辨率,准确性。哦

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