Gas sensitive field effect transistor comprising a gas sensitive layer and method of producing the same

摘要

Gas-sensitive field effect transistor comprises a gas-sensitive layer for generating sensor signals by measuring the change of the output work. The gas-sensitive layer is made from barium titanate with an excess of barium oxide with a part of the layer formed as barium carbonate on the surface. An independent claim is also included for a process for the production of a gas-sensitive layer in the above gas-sensitive field effect transistor.