- Method Of Forming MoW Thin Film Pattern And Method Of Manufacturing Thin Film Transistor Of Liquid Crystal Display Device Using The Same

摘要

PURPOSE: A method for forming a molybdenum-tungsten thin film pattern and a method for manufacturing a TFT(Thin Film Transistor) substrate of an LCD(Liquid Crystal Display) using the same are provided to be capable of supplying optimum condition capable of forming an easily etched molybdenum-tungsten thin film. CONSTITUTION: A sputtering process is carried out for forming a molybdenum-tungsten thin film from the room temperature to 80 C. At this time, the sputtering process is carried out with a speed of 0.010-0.015 angstrom/Ws. Then, an etching process is carried out at the molybdenum-tungsten thin film for selectively patterning the molybdenum-tungsten thin film. Preferably, the target size of the sputtering process is in the range of 144 10 x 660 10(mm x mm).