Method for forming a anti-diffusion film and copper metal line using the same in semiconductor device

摘要

PURPOSE: A method for forming a copper diffusion barrier layer is provided to be capable of restraining hillock by using an Al2O3 layer as the copper diffusion barrier layer. CONSTITUTION: A copper metal line(104) is formed on a semiconductor substrate(102) having a lower structure. A diffusion barrier layer(106) made of Al2O3 is formed on the resultant structure to prevent the diffusion of copper atoms. At this time, the Al2O3 layer is deposited by PECVD(Plasma Enhanced CVD) or ALD(Atomic Layer Deposition) using Al(CH3)3 and Al(OCH(CH3)2)3 as a precursor.