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Dual port static memory cell and semiconductor memory device comprising the cell
Dual port static memory cell and semiconductor memory device comprising the cell
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机译:双端口静态存储单元和包括该单元的半导体存储器件
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摘要
PURPOSE: A dual port static memory cell and a semiconductor memory device comprising the same are provided to minimize the increase of a layout area as accelerating a data read time at the same time. CONSTITUTION: The first transmission transistor is connected between a bit line(BL) and the first node and has a gate connected to a word line(WL). The second transmission transistor is connected between a bit line bar(BLB) and the second node and has a gate connected to the above word line. A latch is connected between the first node and the second node. And a PMOS transistor is connected between the second node and a scan bit line and has a gate connected to a scan control line(SS). Each of the first and the second transmission transistor is constituted with a NMOS transistor.
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