SEMICONDUCTOR DEVICE FOR SIMULTANEOUSLY SUPPRESSING INVERSE NARROW CHANNEL EFFECT AND LEAKAGE CURRENT BETWEEN SOURCE/DRAIN REGIONS AND SUBSTRATE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to suppress the leakage current between source/drain regions and a substrate and the inverse narrow channel effect at the same time in MISFET(Metal Insulator Semiconductor Field Effect Transistor). CONSTITUTION: A semiconductor device includes an active region(14) including a main surface and a side surface, a trench type element isolation region positioned in contact with the side surface, a gate electrode extending across the main surface in a first direction in parallel with the main surfaces, a channel region placed in the main surface facing the gate electrode, source/drain regions(231,232), a high dopant concentration region(31), and a low dopant concentration region(32). The source/drain regions are placed in the main surface with the channel region between them. The high dopant concentration region is placed in the side surfaces, includes two gate electrode facing parts facing each other in the first direction with the channel region between them. The low dopant concentration region is placed in regions where the high dopant concentration region is not formed and has a concentration lower than that of the high impurity concentration region.