METHOD FOR INTERFACING PROFILE OF IMPURITY DENSITY USED FOR ANALYZING THREE-DIMENSIONAL SEMICONDUCTOR DEVICE

摘要

Purpose: a kind of method, the profile for engaging the impurity concentration for analyzing a three-dimensional semiconductor device are arranged to replace a process simulation, in terms of executing a three-dimensional simulation process with execute a dopant concentration profile one accurate interface processing. Construction: a node of a three-dimensional element projects an x, extracts the y plane of an insertion point, so that the node of three-dimensional element is expressed as one second dimension interpolated point. Whether Chou Xiang insertion point, which is present in from the element of the gridding information of general utility tool input, is determined (104). One impurity concentration is inserted in element with an arbitrary insertion point, by using an interpolating function of whole coordinate system system (105).