SEMICONDUCTOR MEMORY DEVICE HAVING BIT LINE BOOSTING SCHEME CAPABLE OF MAXIMIZING BOOSTING LEVEL OF BIT LINE AT LOW VOLTAGE CONDITION

摘要

Purpose: the semiconductor storage device for having some line boosting scheme is arranged to make to maximize in a boost level of a dotted line of a low voltage condition. Construction: a memory cell array (21) includes some Memory Storage Units (MC0-MCn). One dotted line (BL) is connected to memory cell array. Pressurization capacitor (22,23) is connected to bit line and promotes the one boosting driving signal of a voltage responsive of bit line. It is a little perceived with line sensing amplifier (24) and amplifies a voltage difference between bit line and its complementary bit line (BLB). Pressurization capacitor is made of a depletion type nmos transistor, is had at a negative threshold voltage.