60 Cycle time acceleration, 55 energy reduction, 32Kbit SRAM by auto-selective boost (ASB) scheme for slow memory cells in random variations

摘要

An auto selective boost (ASB) scheme for slow SRAM memory cells in random variations has been proposed. ASB shortens the cycle time and decreases the average BL amplitude, which reduces both dynamic and leakage energy dissipation. The cycle time of SRAM is reduced by 60% at 0.5V using the proposed ASB scheme. By combining the ASB with a BL amplitude limiter (BAL), the energy dissipation is reduced by 55%. A 32Kbit SRAM with the ASB and BAL schemes has been fabricated by 40nm CMOS technology.