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SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING REDUCED SIZE AND MANUFACTURING METHOD THEREOF, IMPROVING RECLAMATION CHARACTERISTIC AMONG PLURAL COLUMNAR MISFETS
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING REDUCED SIZE AND MANUFACTURING METHOD THEREOF, IMPROVING RECLAMATION CHARACTERISTIC AMONG PLURAL COLUMNAR MISFETS
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机译:具有减小的尺寸的半导体集成电路装置及其制造方法,改善了多柱错器的再填充特性
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摘要
PURPOSE: A semiconductor integrated circuit device and a manufacturing method thereof are provided to improve a characteristic of an insulating film as well as to reduce a size of the semiconductor integrated circuit device. CONSTITUTION: A semiconductor integrated circuit device includes a plurality of columnar MISFETs(Metal Insulator Semiconductor Field Effect Transistors)(P1,P2) having first and second semiconductor regions on upper and lower portions, respectively, and a plurality of vertical MISFETs. The vertically MISFET includes a conductive film formed adjacent to a first insulating film(70a) on a sidewall of a columnar laminate. The columnar laminate and the conductive film are spaced by a first distance in a first direction, and further spaced by a second distance, which is greater than the first distance, in a second direction. A second insulating film(70b) is formed in a space between the columnar laminates in the first direction up to at least a predetermined height of the columnar laminate. A second insulating film and a third insulating film are formed in a space between the columnar laminates in the second direction.
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