SIC SINGLE-CRYSTALLINE GROWTH SYSTEM TO RESTRICT SUPERSATURATION WITH NO RF COIL

摘要

PURPOSE: An SiC single-crystalline growth system is provided to control easily a phase of a single crystal and supersaturation by moving directly a melting pot without moving an RF coil. CONSTITUTION: An SiC single-crystalline growth system includes a quartz reaction tube(2), a melting pot(4) installed within the quartz reaction tube, and an RF coil(3) installed around the quartz reaction tube. A driving unit is installed at a lower part of the melting pot in order to elevate the melting pot. A screen is installed at an upper end of the inside of the melting pot. The driving unit includes a driving source, a couple of rollers(10) rotated by the driving source, a steel stand(6) having a column, and a guide(9) for supporting and moving the column of the steel stand.