首页> 外国专利> SEMICONDUCTOR LIGHT RECEIVING DEVICE AND FABRICATING METHOD THEREOF TO IMPROVE LIGHT COLLECTION EFFICIENCY AND PLAN TO INCREASE SENSITIVITY OF EACH LIGHT RECEIVING REGION

SEMICONDUCTOR LIGHT RECEIVING DEVICE AND FABRICATING METHOD THEREOF TO IMPROVE LIGHT COLLECTION EFFICIENCY AND PLAN TO INCREASE SENSITIVITY OF EACH LIGHT RECEIVING REGION

机译:半导体光接收装置及其制造方法,以提高光收集效率,并计划提高每个光接收区域的灵敏度

摘要

PURPOSE: A semiconductor light receiving device is provided to improve light collection efficiency and plan to increase sensitivity of each light receiving region by rounding a corner of a transfer electrode adjacent to a light receiving region. CONSTITUTION: A light receiving region is formed on a semiconductor substrate(1). An electrode is formed in the periphery of the light receiving region on the semiconductor substrate to transfer the charges generated by the photoelectric transformation in the light receiving region to the outside of the light receiving region. A part or all of the periphery of the electrode is processed to move back toward the center of the electrode so that the electrode can be separated from the semiconductor substrate.
机译:目的:提供一种半导体光接收装置,以通过使与光接收区域相邻的转移电极的角变圆,来提高光收集效率并计划增加每个光接收区域的灵敏度。构成:在半导体衬底(1)上形成光接收区。电极形成在半导体衬底上的光接收区域的外围中,以将在光接收区域中由光电转换产生的电荷转移到光接收区域的外部。电极的一部分或全部周边被加工成向着电极的中心向后移动,从而可以将电极与半导体衬底分离。

著录项

  • 公开/公告号KR20040087907A

    专利类型

  • 公开/公告日2004-10-15

    原文格式PDF

  • 申请/专利权人 SHARP CORPORATION;

    申请/专利号KR20040023658

  • 发明设计人 YAMAUCHI HIROSHI;

    申请日2004-04-07

  • 分类号H01L31/10;

  • 国家 KR

  • 入库时间 2022-08-21 22:47:52

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