Complementary metal oxide semiconductor image sensor device fabricating method for imaging device, involves forming transfer gate near light receiving and transistor regions such that electrode of gate is kept near active region

摘要

The method involves forming an active region of a unit pixel on a semiconductor substrate, where the active region has a light receiving region and a transistor region surrounded by an isolation layer. A transfer gate is formed near the light receiving and transistor regions such that a vertical gate electrode of the transfer gate is formed in the semiconductor substrate and kept near a sidewall of the active region.