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PASSIVATION LAYER OF SEMICONDUCTOR DEVICE FOR PREVENTING DETERIORATION BY INSERTING METAL BUFFER LAYER BETWEEN OXIDE LAYER AND NITRIDE LAYER AND FORMING METHOD THEREOF
PASSIVATION LAYER OF SEMICONDUCTOR DEVICE FOR PREVENTING DETERIORATION BY INSERTING METAL BUFFER LAYER BETWEEN OXIDE LAYER AND NITRIDE LAYER AND FORMING METHOD THEREOF
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机译:通过在氧化层和氮化层之间插入金属缓冲层来防止变质的半导体器件的钝化层及其形成方法
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摘要
PURPOSE: A passivation layer of a semiconductor device and a forming method thereof are provided to prevent deterioration of a ferroelectric memory capacitor under a metal buffer layer by inserting the metal buffer layer between a lower insulating passivation layer and an upper insulating passivation layer. CONSTITUTION: A lower structure(102) including a transistor and a metal line is formed on an upper surface of a semiconductor substrate(100). A lower insulating passivation layer(104) is formed on the lower structure. A metal buffer layer(106) is formed on the lower insulating layer. An upper passivation layer(108) is formed on the metal buffer layer. The lower structure is formed with a FRAM. The lower insulating passivation layer is formed with a PE-TEOS layer or a PE-oxide layer.
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