device for the removal of the resist formulation with u043fu043bu0430u0437u043cu043eu0445u0438u043cu0438u0447u0435u0441u043au043eu0433u043e semiconductor wafers

摘要

device for the removal of the resist formulation with u043fu043bu0430u0437u043cu043eu0445u0438u043cu0438u0447u0435u0441u043au043eu0433u043e semiconductor wafers containing cylindrical reactor, the top of which is located u0446u0438u043bu0438u043du0434u0440u0438u0447 u0435u0441u043au0430u044f bit chamber equipped with the coil inductance, connected to the hf generator system for gas and u043fu043eu0434u043bu043eu0436u043au043eu0434u0435u0440u0436u0430u0442u0435u043bu044c set in the u0440u0435u0430u043a but outside the zone level, differing in thatin order to reduce energy costs, while maintaining the speed and quality of the removal of the resist formulation, in the bit cell is u043au043eu043du0443u0441u043du044bu0439 ochrea on u043fu043eu0434u043b u043eu0436u043au043eu0434u0435u0440u0436u0430u0442u0435u043bu044e, radius of 0.8 - 1R radius of the treated plates at a distance h from the u043fu043eu0434u043bu043eu0436u043au043eu0434u0435u0440u0436u0430u0442u0435u043bu044f determined by the inequality 0,08Ru2264hu22640,4R and under u043bu043eu0436u043au043eu0434u0435u0440u0436u0430u0442u0435u043bu044c is located at a distance l from the coil inductance.which is selected from the u0443u0441u043bu043eu0432u0438u044f1,6Ru2264Lu226410,0R and radius of bit cells (0.4 to 0.8) r.