device for the removal of the resist formulation with u043fu043bu0430u0437u043cu043eu0445u0438u043cu0438u0447u0435u0441u043au043eu0433u043e semiconductor wafers

摘要

device for the removal of the resist formulation with u043fu043bu0430u0437u043cu043eu0445u0438u043cu0438u0447u0435u0441u043au043eu0433u043e semiconductor wafers containing hf generator, u0430u043au0442u0438u0432u0430u0446u0438u043eu043du043du0443u044e cell in the form of a tube of u0434u0438u044du043bu0435u043au0442u0440u0438u0447u0435u0441u043au043e the material system of a gas discharge tube which is located in the top of the overlap of working gas, and the reaction chamber with u0442u0435u0440u043cu043eu0441u0442u0430u0431u0438u043bu0438u0437u0438u0440u043eu0432u0430u043du043du044bu043c u043fu043eu0434u043bu043eu0436u043au043eu0434u0435u0440u0436u0430u0442u0435u043bu0435u043c installed under the chamber outside the zone of gas discharge.different topics, with the aim of improving the speed of removing the resist formulation and the quality of processed wafers, u0430u043au0442u0438u0432u0430u0446u0438u043eu043du043du0430u044f chamber provided with at least one complement u0435u043bu044cu043du043eu0439 tube of equal diameter, the excitation system is done in a two u043fu043bu043eu0441u043au043eu043fu0430u0440u0430u043bu043bu0435u043bu044cu043du044bu0445 electrodes with holes in which the installed pipes u0430u043au0442u0438u0432u0430u0446u0438u043eu043du043du043e two camerasthe pipes are placed symmetrically about the center u043fu043eu0434u043bu043eu0436u043au043eu0434u0435u0440u0436u0430u0442u0435u043bu044f, with the electrode on the u043fu0430u0442u0440u0443u0431u043au0443 overlap strip electrode on the ground. u043fu043eu0434u043bu043eu0436u043au043eu0434u0435u0440u0436u0430u0442u0435u043bu044e, is connected to the hf generator and is located at a distance l from the u043fu043eu0434u043bu043eu0436u043au043eu0434u0435u0440u0436u0430u0442u0435u043bu044f determined from u0441u043eu043eu0442u043du043eu0448u0435u043du0438u044f2,1 Du2264lu226421 d and the distance h between the electro dami is located within the 3u2264hu22642,1 d, mm, where d is the inner diameter of the pipe.mm.