MOS power transistor has one or more gate zones, each between source and drain or bulk node zones; each bulk node zone is arranged separately from one or more source electrode zones

摘要

The device has a source electrode zone(s) of a first conducting type in an n-conducting semiconducting zone in a p-conducting substrate region, a drain electrode zone(s) of this type, a gate electrode zone(s) of a second conducting type and at least one highly doped bulk node of the second type with each gate zone between a source and a drain of bulk node zone. Each bulk node zone is arranged separately from one or more source electrode zone. The device has at least one source electrode zone (S) of a first conducting type in an n-conducting semiconducting zone (11) in a p-conducting substrate region (10), at least one drain electrode zone (D) of this type, at least one gate electrode zone (G) of a second conducting type and at least one highly doped bulk node (B) of the second type with each gate zone between a source and a drain of bulk node zone. Each bulk node zone is arranged separately from one or more source electrode zone.