首页> 外国专利> Circuit arrangement for current overload and short circuit protection in MOS integrated circuits monitors both load current and voltage across transistor controlling load

Circuit arrangement for current overload and short circuit protection in MOS integrated circuits monitors both load current and voltage across transistor controlling load

机译:MOS集成电路中用于电流过载和短路保护的电路装置可监控负载电流和控制负载的晶体管两端的电压

摘要

A power transistor (T2) controls the current in a load (RL) which has in series with it a shunt resistor (R1). The shunt voltage (US) is fed to a current monitoring circuit (20) which controls the power transistor through a control transistor (T1) so that the load current cannot rise above a first threshold. A second monitoring circuit (40,T3,T4) controls the first if the voltage drop across the power transistor and the shunt rises above a set voltage so that the load current is limited to a value below the first threshold.
机译:功率晶体管(T2)控制负载(RL)中的电流,该负载与其并联一个分流电阻(R1)。分流电压(US)被馈送到电流监视电路(20),该电流监视电路(20)通过控制晶体管(T1)控制功率晶体管,使得负载电流不能上升到第一阈值以上。如果功率晶体管两端的电压降和分流器的电压升高到设定电压以上,则第二监视电路(40,T3,T4)将控制第一监视电路,从而将负载电流限制为低于第一阈值的值。

著录项

  • 公开/公告号DE10226082A1

    专利类型

  • 公开/公告日2004-01-08

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE2002126082

  • 发明设计人 OYRER ROBERT;

    申请日2002-06-12

  • 分类号H02H9/02;G05F1/573;

  • 国家 DE

  • 入库时间 2022-08-21 22:44:08

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