Photodetector component, for large scale integration applications, comprises a photosensistive layer having a high absorption coefficient along a first direction

摘要

Photodetector component comprises a photosensistive layer (18) having a high absorption coefficient along a first direction and a low absorption coefficient along a second direction perpendicular to the first direction. The photosensistive layer is made from a semiconductor material having a wurzite structure and a (1100)-orientation. An independent claim is also included for a process for detecting the polarization of an incident light beam.