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Production of a SOI substrate comprises preparing a SOI substrate by embedding a trenched oxide layer between a crystalline silicon layer and a silicon substrate
Production of a SOI substrate comprises preparing a SOI substrate by embedding a trenched oxide layer between a crystalline silicon layer and a silicon substrate
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机译:SOI衬底的生产包括通过在晶体硅层和硅衬底之间嵌入沟槽氧化物层来制备SOI衬底。
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摘要
Production of a SOI substrate comprises preparing a SOI substrate by: (a) embedding a trenched oxide layer (BOX) between a crystalline silicon layer and a silicon substrate (Si); (b) applying a hard mask layer on at least one region of the silicon layer; (c) forming a window in the hard mask layer to expose the silicon layer in the window region; (d) removing the silicon layer in the window region by dry etching from a first silicon layer thickness to a second silicon layer thickness; and (e) removing the silicon layer in the window region by local oxidation of the silicon and wet chemical etching of the silicon oxide formed to a third silicon layer thickness.
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