首页> 外国专利> Oxidizing a layer comprises inserting the substrate carrying a layer stack into a heating unit, feeding an oxidation gas onto the substrate, heating to a process temperature, and regulating or controlling the temperature

Oxidizing a layer comprises inserting the substrate carrying a layer stack into a heating unit, feeding an oxidation gas onto the substrate, heating to a process temperature, and regulating or controlling the temperature

机译:氧化层包括:将带有叠层的基板插入加热单元中;将氧化气体进料到基板上;加热至工艺温度;以及调节或控制温度

摘要

Oxidizing a layer comprises preparing a substrate (114) supporting a layer to be oxidized which is part of a layer stack containing the substrate or base layer and a neighboring layer formed on the surface of the layer to be oxidized facing the base surface, inserting the substrate carrying the layer stack into a heating unit (80), feeding an oxidation gas onto the substrate, heating the substrate to a process temperature, acquiring the process temperature during processing via the substrate of a receiving unit (110) for the substrate, and regulating or controlling the substrate temperature at a prescribed theoretical temperature during processing. An Independent claim is also included for a receiving unit having a recess (124) for an exchangeable ring (128) for the substrate.
机译:氧化层包括制备支撑要被氧化的层的衬底(114),该层是包含衬底或基础层以及形成在要被氧化的层的面向基底表面的表面上的相邻层的叠层的一部分,将所述层堆叠携带到加热单元(80)中的衬底,将氧化气体进给到衬底上,将衬底加热到​​处理温度,在处理过程中经由衬底的接收单元(110)获取衬底的处理温度,以及在处理期间将衬底温度调节或控制在规定的理论温度。独立权利要求还包括一种容纳单元,该容纳单元具有用于基板的可更换环(128)的凹部(124)。

著录项

  • 公开/公告号DE10234694A1

    专利类型

  • 公开/公告日2004-02-12

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE2002134694

  • 发明设计人 CHUNG HIN-YIU;GUTT THOMAS;

    申请日2002-07-30

  • 分类号B01J19/00;H01L21/316;H01L21/68;

  • 国家 DE

  • 入库时间 2022-08-21 22:44:01

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