A method for the production of group - ii - oxide layers with the gas phase epitaxy, group - ii - oxide layer and group - ii - oxide semiconductor device

摘要

In the production of group II oxide films by gas phase epitaxy, a buffer layer is deposited at a lower temperature than the main layer in the same growth chamber and oxygen precursors of the type water and/or organic nitroso, ketone and/or ether compound(s) are used for growth of the buffer layer. In the production of group II oxide films by gas phase epitaxy, a buffer layer is deposited at a lower temperature than the main layer in the same growth chamber and oxygen precursors of the type H-O-H, NO-R, O=R and/or R-O-R (where R = any organic group) are used for growth of the buffer layer. Independent claims are also included for: (a) group II oxide film produced in this way; (b) group II oxide semiconductor device with the specified buffer and main layers, which has an n-p junction obtained by doping with main group III elements and a p-type layer with main group V elements.