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Semiconductor chip stack manufacturing method incorporates bridging of conductor paths of one semiconductor chip for design modification

机译:半导体芯片堆叠制造方法结合了一个半导体芯片的导体路径的桥接以进行设计修改

摘要

The manufacturing method has a pair of semiconductor chips (11,12) each provided with metallized layer contact surfaces (21), covered with an insulation layer (22) in which through contact openings are formed for connection with conductor paths (3,23). The surface of one of the semiconductor chips provided with the conductor paths also has a conductor path (13) bridged by covering it with an insulation layer (14) provided with a bridging conductor path layer (20).
机译:该制造方法具有一对分别具有金属化层接触表面(21)的半导体芯片(11,12),覆盖有绝缘层(22),绝缘层(22)中形成有用于与导体路径(3,23)连接的通孔。 。设置有导体路径的半导体芯片之一的表面还具有导体路径(13),该导体路径通过用绝缘层(14)覆盖而桥接,该绝缘层(14)设置有桥接导体路径层(20)。

著录项

  • 公开/公告号DE10313047B3

    专利类型

  • 公开/公告日2004-08-12

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE2003113047

  • 发明设计人 HUEBNER HOLGER;

    申请日2003-03-24

  • 分类号H01L23/522;H01L21/58;H01L25/065;H01L21/60;

  • 国家 DE

  • 入库时间 2022-08-21 22:43:25

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