首页> 外国专利> Sputtering device useful for production of thin dielectric films for optical devices and mixed films, includes a vacuum chamber, a cylindrical rotatable substrate holder in the generator and two film deposition regions

Sputtering device useful for production of thin dielectric films for optical devices and mixed films, includes a vacuum chamber, a cylindrical rotatable substrate holder in the generator and two film deposition regions

机译:可用于制造光学器件和混合膜的薄介电膜的溅射装置,包括真空室,发生器中的圆柱形可旋转基板支架和两个薄膜沉积区域

摘要

A sputtering device including a vacuum chamber (1), a cylindrical rotatable substrate holder (9) in the generator, a substrate mounted on the outer periphery of the substrate holder, two film deposition regions in the vacuum chamber, first and second sputtering sources (35,36), targets, cathodes, and plasma generators (51,52), with the first sputtering source and plasma generator and the second sputtering source and generator respectively separated from each other. An independent claim is included for a mixed film applied to a substrate by a sputtering device with repetition of the following process:sputtering of a film from a first target material onto the substrate from a first target source, production of a reaction of the film formed by a first plasma generator, deposition of a film from a second target material from a second sputtering source, and production of a reaction of the film formed by a second plasma generator.
机译:一种溅射装置,包括:真空室(1),发生器中的圆柱形可旋转基板支架(9),安装在基板支架外周上的基板,真空室中的两个膜沉积区域,第一和第二溅射源(在图35(36,36)中,靶,阴极和等离子体发生器(51,52)分别具有第一溅射源和等离子体发生器以及第二溅射源和发生器彼此分离。包括对通过溅射装置施加到基材上的混合膜的独立权利要求,其重复以下过程:从第一靶材将膜从第一靶材溅射到基材上,产生所形成的膜的反应通过第一等离子体发生器,由来自第二溅射源的第二靶材料沉积膜,并产生由第二等离子体发生器形成的膜的反应。

著录项

  • 公开/公告号DE102004004569A1

    专利类型

  • 公开/公告日2004-08-26

    原文格式PDF

  • 申请/专利权人 ASAHI GLASS CO. LTD.;

    申请/专利号DE20041004569

  • 发明设计人 MIYAMURA MASAO;

    申请日2004-01-29

  • 分类号C23C14/34;

  • 国家 DE

  • 入库时间 2022-08-21 22:43:13

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