Method and reactor for the growth of silicon - carbide single-crystal valley by chemical vapor deposition

摘要

The method comprises the supply, into a chamber (2) of the horizontal type reactor with at least one substrate (10) mounted in the chamber (2), of gaseous reagents containing silicon and carbon, the heating of the chamber walls up to a temperature lying within the range 1800-2500 DEG C, and the heating of the substrate (10). The reagents are fed to the chamber (2) separately and mixed directly in the vicinity of the growing surface of the substrate (10).