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mram with effective measures against electromagnetic interference
mram with effective measures against electromagnetic interference
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机译:具有有效的抗电磁干扰措施
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摘要
In a magnetic random access memory having a memory device portion (33,34,35) using magnetic material, a high-frequency current suppressor (26) is arranged in the vicinity of the magnetic material to suppress a high-frequency current which flows in the memory device portion. The memory device and the high-frequency current suppressor may be collectively molded in a mold body (25) of a plastic resin. It is preferable that the high-frequency current suppressor is made by a thin film of a granular magnetic material which has a composition represented by M-X-Y where M is a magnetic metal element, Y is one element selected from oxygen, nitrogen, and fluorine, and X is an element other than M and Y.
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