Production of semiconductor nanostructures on dielectric substrate comprises chemical vapor phase deposition onto stable semiconductor seeds, e.g. for floating gate and other memory cells

摘要

The production of nanostructures of semiconductor materials on a dielectric substrate comprises: (a) the formation on the substrate (12) of stable seeds (14) in the form of islets, by chemical vapor phase deposition (CVD) from a precursor (11) of a first semiconductor material; and (b) the formation of nanostructures (16A, 16B) of a second semiconductor material from the stable seeds of the first semiconductor material, by CVD from a precursor chosen to generate a selective deposition of the second semiconductor material only on the seeds. Independent claims are also included for the following: (a) nanostructures produced by the above process; and (b) a device incorporating the nanostructures.