首页> 外国专利> Production of polycrystalline blocks of rare earth metal halide, useful for monocrystal production, comprises heating mixture or complex of rare earth metal halide and an ammonium halide to form a melt and then cooling the melt

Production of polycrystalline blocks of rare earth metal halide, useful for monocrystal production, comprises heating mixture or complex of rare earth metal halide and an ammonium halide to form a melt and then cooling the melt

机译:用于单晶生产的多晶稀土金属卤化物块的生产包括加热稀土金属卤化物和卤化铵的混合物或配合物以形成熔体,然后冷却熔体

摘要

Production of polycrystalline blocks comprising at least 10 g of a rare earth metal halide (I) comprises heating a mixture or complex of a rare earth metal halide and an ammonium halide to form a melt and then cooling the melt. Having reached 300 degrees C, the temperature is never allowed to fall below 200 degrees C before melt formation. Production of polycrystalline blocks comprising at least 10 g of a rare earth metal halide of formula (I) comprises heating a mixture or complex of a rare earth metal halide and an ammonium halide to form a melt and then cooling the melt. Having reached 300 degrees C, the temperature is never allowed to fall below 200 degrees C before melt formation: AeLnfX(3f+e) (I) Ln = rare earth metal(s); X = Cl, Br or I; A = alkali metal(s); e = 0-3f; f = 1 or more. Independent claims are also included for: (1) polycrystalline block of at least 1 g (I) containing less than 0.1 wt.% water and less than 0.2 wt.% rare earth metal oxyhalide; (2) monocrystal produced by melting a block as above; (3) monocrystal of (I) containing less than 0.1 wt.% rare earth metal oxyhalide.
机译:包含至少10 g稀土金属卤化物(I)的多晶块的生产包括加热稀土金属卤化物和卤化铵的混合物或配合物以形成熔体,然后冷却该熔体。达到300摄氏度后,在形成熔体之前绝不允许温度降至200摄氏度以下。包含至少10g的式(I)的稀土金属卤化物的多晶嵌段的生产包括加热稀土金属卤化物和卤化铵的混合物或配合物以形成熔体,然后冷却该熔体。达到300摄氏度后,在形成熔体之前,温度绝不允许降至200摄氏度以下:AeLnfX(3f + e)(I)Ln =稀土金属; X = Cl,Br或I; A =碱金属; e = 0-3f; f = 1或更大。还包括以下方面的独立权利要求:(1)至少1 g(I)的多晶块,其中含有少于0.1 wt。%的水和少于0.2 wt。%的稀土金属卤氧化物; (2)通过熔化上述块而产生的单晶; (3)(I)的单晶,其含有少于0.1重量%的稀土金属卤氧化物。

著录项

  • 公开/公告号FR2847594A1

    专利类型

  • 公开/公告日2004-05-28

    原文格式PDF

  • 申请/专利权人 SAINT GOBAIN CRISTAUX DETECTEURS;

    申请/专利号FR20020014856

  • 发明设计人 ILTIS ALAIN;

    申请日2002-11-27

  • 分类号C30B28/02;C30B29/12;C09K11/85;

  • 国家 FR

  • 入库时间 2022-08-21 22:39:24

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